CS5N20A4 |
Part Number | CS5N20A4 |
Manufacturer | Huajing Microelectronics |
Description | VDSS 200 V CS5N20 A4, the silicon N-channel Enhanced ID 4.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 40 W which reduce the conduction loss, improve switchin... |
Features |
l Fast Switching l Low ON Resistance(Rdson≤0.65Ω) l Low Gate Charge (Typical Data:7nC) l Low Reverse transfer capacitances(Typical:8pF) l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
TJ,Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = ... |
Document |
CS5N20A4 Data Sheet
PDF 615.32KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | CS5N20A3 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
2 | CS5N20FA9 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
3 | CS5N65A3 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
4 | CS5N65A4 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
5 | CS5N65A7H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |