2SC4135 Inchange Semiconductor Silicon NPN Power Transistor Datasheet, en stock, prix

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2SC4135

Inchange Semiconductor
2SC4135
2SC4135 2SC4135
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Part Number 2SC4135
Manufacturer Inchange Semiconductor
Description ·High breakdown voltage and large current capacity ·Fast switching speed ·Small and slim package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operat...
Features ion Voltage IC= 1.0A; IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage IC= 1.0A; IB= 0.1A V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10uA; IC= 0 ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 0.1A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz fT Current-Gain—Bandwidth Product IC= 0.1mA; VCE= 10V
 hFE Classifications R S T 100-200 140-280 200-400 2SC4135 MIN TYP. MAX UNIT 0.4 V 1.2 V 100 V 6 V 100 nA 100 nA 100 400 ...

Document Datasheet 2SC4135 Data Sheet
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