2SC4130 NPN Transistor Datasheet

2SC4130 NPN Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Co.

Features

Saturation Voltage IC= 3A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A ICBO Collector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB= 10V; IC= 0 hFE DC Current Gain IC= 3A; VCE= 4V COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz fT Current-Gain—Bandwidth Product IE= -0.5A; VCE= 12V Switching Times ton Turn-On Time tstg Storage Time tf Fall Time IC= 3A; IB1= 0.3A; IB2= -0.6A; VCC= 200V; RL= 67Ω 2SC4130 MIN TYP. MAX UNIT 400 V 0.5 V 1.3 V 100 μA 100 μA 10 30 50 pF 15 MHz 1.0 μs 2.2 μs 0.5 μs NOTICE： ISC reserves t.

The same part from a different manufacturer

2SC4130 - Sanken electric

2SC4130 Silicon NPN Epitaxial Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum rat.

2SC4130 - SavantIC

·With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose app.

Related Product

No.	Partie #	Fabricant	Description
1	2SC4131	Sanken electric	Silicon NPN Transistor
2	2SC4131	INCHANGE	NPN Transistor
3	2SC4131	SavantIC	SILICON POWER TRANSISTOR
4	2SC4132	Rohm	Power Transistor
5	2SC4132	Kexin	NPN Epitaxial Planar Silicon Transistors
6	2SC4133	Sanyo	NPN Epitaxial Planar Silicon Transistors
7	2SC4134	Inchange Semiconductor	Silicon NPN Power Transistor
8	2SC4134	Sanyo Semicon Device	PNP/NPN Epitaxial Planar Silicon Transistors
9	2SC4134	Kexin	Transistors
10	2SC4134	ON Semiconductor	Bipolar Transistor
11	2SC4135	Inchange Semiconductor	Silicon NPN Power Transistor
12	2SC4135	Sanyo Semicon Device	PNP/NPN Epitaxial Planar Silicon Transistors

2SC4130 - INCHANGE