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·High Reliability ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -2A ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Volta.
Collector-Emitter Breakdown Voltage IC= -5mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -0.5A; VCE= -5V ICBO Collector Cutoff Current VCB= -40V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE-1 DC Current Gain IC= -0.5A; VCE= -5V hFE-2 DC Current Gain IC= -3A; VCE= -5V COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5V MIN TYP. MAX .
2SB1273 - SavantIC
·With TO-220 package ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier a.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1270 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Type Silicon Transistors |
|
| 2 | 2SB1271 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Type Silicon Transistors |
|
| 3 | 2SB1272 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SB1272 |
INCHANGE |
PNP Transistor |
|
| 5 | 2SB1274 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SB1274 |
GME |
PNP Epitaxial Planar Silicon Transistors |
|
| 7 | 2SB1274 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SB1274 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 9 | 2SB1274 |
SeCoS |
PNP Plastic Encapsulated Transistor |
|
| 10 | 2SB1274 |
LGE |
PNP Transistor |
|
| 11 | 2SB1275 |
Rohm |
Power Transistor |
|
| 12 | 2SB1275 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|