2SB1184 Inchange Semiconductor Silicon PNP Power Transistor Datasheet, en stock, prix

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2SB1184

Inchange Semiconductor
2SB1184
2SB1184 2SB1184
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Part Number 2SB1184
Manufacturer Inchange Semiconductor
Description ·Low VCE(sat) ·Small and slim package ·Complements the 2SD1760/2SD1864 ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power dissipation...
Features llector-Base Breakdown Voltage IC= -50uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50uA; IC= 0 ICBO Collector Cutoff Current VCB= -20V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE DC Current Gain IC= -0.5A; VCE= -3V COB Output Capacitance IE= 0; VCB= -10V; f= 1.0MHz fT Current-Gain—Bandwidth Product IC= -500mA; VCE= -5V MIN TYP. MAX UNIT -1.0 V -1.5 V -60 V -50 V -5 V -1.0 μA -1.0 μA 82 390 70 pF 50 MHz
 hFE Classifications P Q R 82-180 120-270 180-390 isc website:www.iscse...

Document Datasheet 2SB1184 Data Sheet
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