SEMICONDUCTOR TECHNICAL DATA KTD1413 EPITAXIAL PLANAR NPN TRANSISTOR HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES High DC Current Gain : hFE=2000(Min.) at VCE=2V, IC=3A. Low Saturation Voltage : VCE(sat)=1.5V(Max.) at IC=3A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emi.
High DC Current Gain : hFE=2000(Min.) at VCE=2V, IC=3A. Low Saturation Voltage : VCE(sat)=1.5V(Max.) at IC=3A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature VCBO VCEO VEB0 IC IB PC Tj Storage Temperature Range Tstg RATING 150 100 7 5 0.5 25 150 -55 150 UNIT V V V A A W K A S E LL M DD NN J GF B P C DIM MILLIMETERS A 10.0+_ 0.3 B 15.0+_ 0.3 C 2.70 +_ 0.3 D 0.76+0.09/-0.05 E Φ3.2 +_ 0.2 F 3.0+_ 0.3 G 12.0+_ 0.3 H 0.5+.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KTD1411 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
2 | KTD1414 |
Inchange Semiconductor |
Silicon NPN Power Transistors | |
3 | KTD1414 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
4 | KTD1415 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
5 | KTD1415V |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
6 | KTD1003 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
7 | KTD101B105M32A0T00 |
NIPPON CHEMI-CON |
DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS | |
8 | KTD101B106M80A0B00 |
NIPPON CHEMI-CON |
DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS | |
9 | KTD101B107M99A0B00 |
NIPPON CHEMI-CON |
DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS | |
10 | KTD101B155M32A0T00 |
NIPPON CHEMI-CON |
DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS | |
11 | KTD101B155M43A0T00 |
NIPPON CHEMI-CON |
DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS | |
12 | KTD101B156M80A0B00 |
NIPPON CHEMI-CON |
DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS |