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MJD42C |
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| Part Number | MJD42C |
| Manufacturer | Inchange Semiconductor |
| Description | ·DC Current Gain -hFE = 30(Min)@ IC= -0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Complement to Type MJD41C ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variation... |
| Features |
mbient 71.4 ℃/W
MJD42C
isc website： www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A
VBE(on) Base-Emitter On Voltage
IC= -6A; VCE= -4V
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
ICEO
Collector Cutoff Current
VCE= -60V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -0.3A ; VCE= -4V
... |
| Document |
 MJD42C Data Sheet
PDF 241.03KB |
| Distributor | Stock | Price | Buy |
|---|
