MJD42C MJD42C General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP42C 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO .
ration Voltage
* Base-Emitter ON Voltage Current Gain Bandwidth Product Test Condition IC = - 30mA, IB = 0 VCE = -60V, IB = 0 VCE = -100V, VBE = 0 VBE = -5V, IC = 0 VCE = -4V, IC = -0.3A VCE = -4V, IC = -3A IC = -6A, IB = -600mA VCE = -6A, IC = -4A VCE = -10V, IC = -500mA 3 30 15 Min. -100 Max. -50 -10 -0.5 75 -1.5 -2 V V MHz Units V µA µA mA
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD42C
Typical Characteristics
1000
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
-10
VCE = -2V
IC = 10 IB
hFE, DC CURRENT GAIN
100
-1
V BE(sat)
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MJD41C |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
2 | MJD41C |
Kexin |
Complementary Power Transistors | |
3 | MJD41C |
ON |
Complementary Power Transistors | |
4 | MJD41C |
Fairchild |
General Purpose Amplifier | |
5 | MJD41C |
Motorola |
SILICON POWER TRANSISTORS | |
6 | MJD41C |
GME |
Epitaxial Planar NPN Transistor | |
7 | MJD41C |
DIODES |
100V NPN MEDIUM POWER TRANSISTOR | |
8 | MJD42C |
SeCoS |
PNP Transistor | |
9 | MJD42C |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
10 | MJD42C |
Kexin |
Complementary Power Transistors | |
11 | MJD42C |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
12 | MJD42C |
GME |
Epitaxial Planar PNP Transistor |