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EMB17A03V |
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| Part Number | EMB17A03V |
| Manufacturer | Excelliance MOS |
| Description | Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 17mΩ ID 10A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ... |
| Features |
ed by maximum junction temperature. 2Duty cycle 1％ 355°C / W when mounted on a 1 in2 pad of 2 oz copper.
7.5 °C / W
55
2012/8/15
p.1
ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
EMB17A03V
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current
On‐State Drain Current1 Drain‐Source On‐State Resistance1
Forward Transconductance1
V(BR)DSS VGS(th) IGSS IDSS
ID(ON) RDS(ON)
gfs
VGS = 0V, ID = 250A VDS = VGS, ID =... |
| Document |
 EMB17A03V Data Sheet
PDF 180.96KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | EMB17A03G |
Excelliance MOS |
Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 2 | EMB17A03H |
Excelliance MOS |
MOSFET |
|
| 3 | EMB17C03G |
Excelliance MOS |
N & P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 4 | EMB17N03G |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 5 | EMB10 |
Rohm |
PNP Digital Transistors |
|