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BUV66 |
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| Part Number | BUV66 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for swi... |
| Features |
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA; IB= 0
450
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
VCE(sat) VBE(sat)
ICER ICEV
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current
IC= 8A; IB= 1.6A IC= 8A; IB= 1.6A; TC= 100℃
IC= 8A; IB= 1.6A IC= 8A; IB= 1.6A; TC= 100℃
VCE= VCEV; RBE= 10Ω VCE= VCEV; RBE= 10Ω; TC=100℃
VCE= VCEV; VBE= -1.5V VCE= VCEV; VBE= -1.5V;TC=100℃
IEBO
Emitter C... |
| Document |
 BUV66 Data Sheet
PDF 208.76KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUV60 |
ON Semiconductor |
SWITCHMODE Series NPN Silicon Power Transistor |
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| 2 | BUV60 |
Seme LAB |
Bipolar NPN Device |
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| 3 | BUV61 |
STMicroelectronics |
HIGH POWER NPN SILICON TRANSISTOR |
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| 4 | BUV61 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
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| 5 | BUV61 |
Seme LAB |
Bipolar NPN Device |
|