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STP413D |
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| Part Number | STP413D |
| Manufacturer | Stanson Technology |
| Description | STP413D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP413D has been designed specially to improve the ... |
| Features |
E MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Typical
Drain-Source Voltage
VDSS
-40
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
Pulsed Drain Current
TA=25℃ TA=70℃
VGSS ID
IDM
±20
-12.0 -10.0
-30
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
IS PD TJ
-12
50 25
150
Storgae Temperature Range
TSTG
-55/150
Thermal Resistance-Junction to Ambient
RθJA
60
Unit V V A A A W ℃ ℃
℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2009... |
| Document |
 STP413D Data Sheet
PDF 672.94KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STP4189D |
STANSON |
P-Channel Enhancement Mode MOSFET |
|
| 2 | STP4189D |
Stanson Technology |
MOSFET |
|
| 3 | STP400N4F6 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 4 | STP40N03L-20 |
ST Microelectronics |
N-Channel MOSFET |
|
| 5 | STP40N06 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
|