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STP3467 |
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| Part Number | STP3467 |
| Manufacturer | Stanson Technology |
| Description | The STP3467 is the P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minim... |
| Features |
3467ST6RG ST6 : TSOP-6; R: Tape Reel ; G: Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STP3467 2008. V1 STP3467 P Channel Enhancement Mode MOSFET -5.2A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current ID IDM -5.2 -4.2 -20 A A Continuous Source Current (Diode Conduction) IS -1.7 A Power Dissipation Operation Junction Temperature TA=25℃ TA=7... |
| Document |
 STP3467 Data Sheet
PDF 809.29KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STP3467ST6RG |
Stanson Technology |
MOSFET |
|
| 2 | STP3401 |
Semtron |
P-Channel Enhancement Mode MOSFET |
|
| 3 | STP3401A |
Semtron |
P-Channel Enhancement Mode MOSFET |
|
| 4 | STP3407 |
Semtron |
P-Channel Enhancement Mode MOSFET |
|
| 5 | STP3415 |
Semtron |
P-Channel Enhancement Mode MOSFET |
|