STN1304 |
Part Number | STN1304 |
Manufacturer | Stanson Technology |
Description | STN1304 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to mini... |
Features |
SA www.stansontech.com
STN1304 2005. V1
STN1304
N Channel Enhancement Mode MOSFET
2.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol Typical
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain CurrentTJ=150℃)
TA=25℃ TA=70℃
Pulsed Drain Current
VDSS VGSS
ID IDM
20
±12 2.0 1.5 10
V V A A
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
Storgae Temperature Range
Thermal Resistance-Junction to Ambient
IS PD TJ TSTG RθJA
1.6 1.25 0.8 150
-55/150
105
A W ℃ ℃ ℃/W
STANSON TECHN... |
Document |
STN1304 Data Sheet
PDF 224.99KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | STN101050BL25 |
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2 | STN1012 |
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4 | STN1110 |
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5 | STN1110-I |
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