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STC6602 |
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| Part Number | STC6602 |
| Manufacturer | Stanson Technology |
| Description | The STC6602 is the dual N&P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored t... |
| Features |
-Source Voltage
Symbol VDSS
Typical NP
30 -30
Unit V
Gate-Source Voltage
VGSS
±20
±20
V
Continuous Drain Current (TJ=150℃)
Pulsed Drain Current
TA=25℃ TA=70℃
ID IDM
2.8
-2.8
A
2.3 -2.1 10 -8 A
Continuous Source Current (Diode Conduction)
IS
1.25
-1.4
A
Power Dissipation Operation Junction Temperature
TA=25℃ TA=70℃
PD TJ
1.15 0.75 -55/150
W ℃
Storage Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
T≦10sec Steady State
RθJA
50 90
52
℃/W 90
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com
STC6... |
| Document |
 STC6602 Data Sheet
PDF 863.79KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STC6602ST6RG |
Stanson Technology |
MOSFET |
|
| 2 | STC6614 |
Stanson Technology |
MOSFET |
|
| 3 | STC601F |
AUK |
NPN Silicon Transistor |
|
| 4 | STC603PI |
AUK |
NPN Silicon Transistor |
|
| 5 | STC6075Q |
AUK |
NPN Silicon Transistor |
|