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The STC6614 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as notebook computer power management a.
View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STC6614 2010. V1 STC6614 N&P Pair Enhancement Mode MOSFET 7.0A / -5.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Symbol VDSS Typical NP 60 -60 Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature VGSS ID IDM IS PD TJ ±20 ±20 7.0 -5.0 5.2 -4.0 40 -30 3 -3 2.3 2.3 1.3 1.3 150 Storgae Temperature Range Thermal Resistan.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STC6602 |
Stanson Technology |
MOSFET |
|
| 2 | STC6602ST6RG |
Stanson Technology |
MOSFET |
|
| 3 | STC601F |
AUK |
NPN Silicon Transistor |
|
| 4 | STC603PI |
AUK |
NPN Silicon Transistor |
|
| 5 | STC6075Q |
AUK |
NPN Silicon Transistor |
|
| 6 | STC62WV1024 |
STC |
VERY LOW POWER VOLTAGE CMOS SRAM |
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| 7 | STC62WV12816 |
STC |
Very Low Power/Voltage CMOS SRAM |
|
| 8 | STC62WV1M8 |
STC |
Very Low Power/Voltage CMOS SRAM |
|
| 9 | STC62WV256 |
STC |
VERY LOW POWER/VOLTAGE CMOS SRAM |
|
| 10 | STC62WV25616 |
STC |
Very Low Power/Voltage CMOS SRAM |
|
| 11 | STC62WV2568 |
STC |
Very Low Power/Voltage CMOS SRAM |
|
| 12 | STC62WV51216 |
STC |
Very Low Power/Voltage CMOS SRAM |
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