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1SS302A |
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| Part Number | 1SS302A |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | Switching Diodes Silicon Epitaxial Planar 1SS302A 1. Applications • Ultra-High-Speed Switching 2. Features (1) AEC-Q101 qualified (Note 1) (2) Fast reverse recovery time : trr = 1.6 ns (typ.) Note 1: ... |
| Features |
(1) AEC-Q101 qualified (Note 1) (2) Fast reverse recovery time : trr = 1.6 ns (typ.) Note 1: For detail information, please contact our sales.
3. Packaging and Internal Circuit
USM
1SS302A
1: Anode 1 2: Cathode 2 3: Cathode1 / Anode 2
©2017-2022
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2014-12
2022-11-22 Rev.5.0
1SS302A
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)
Characteristics
Symbol
Note
Rating
Unit
Peak reverse voltage
VRM
85
V
Reverse voltage
VR
80
Peak forward current
IFM
(Note 1)
300
mA
Aver... |
| Document |
 1SS302A Data Sheet
PDF 186.97KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 1SS302 |
Toshiba Semiconductor |
Diode |
|
| 2 | 1SS302 |
Guangdong Kexin Industrial |
ULTRA HIGH SPEED SWITCHING APPLICATIONS |
|
| 3 | 1SS300 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|
| 4 | 1SS300 |
Kexin |
ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES |
|
| 5 | 1SS301 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|