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BUW39 |
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| Part Number | BUW39 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Current Capability ·Fast Switching Speed ·Low Saturation Voltage and High Gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use ... |
| Features |
ite：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
BUW39
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
80
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 30A; IB= 3A
VBE(sat) Base-Emitter Saturation Voltage
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 30A; IB= 3... |
| Document |
 BUW39 Data Sheet
PDF 206.44KB |
| Distributor | Stock | Price | Buy |
|---|
