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18N60 |
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| Part Number | 18N60 |
| Manufacturer | Inchange Semiconductor |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor 18N60 ·FEATURES ·With TO-247 packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot... |
| Features |
·With TO-247 packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 18 IDM Drain Current-Single Pulsed 48 PD Total Dissipation 360 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS S... |
| Document |
 18N60 Data Sheet
PDF 207.85KB |
| Distributor | Stock | Price | Buy |
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