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CNY21 |
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| Part Number | CNY21 |
| Manufacturer | TEMIC Semiconductors |
| Description | The CNY21N consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 4-lead plastic dual inline package. h S a t e e w w the opposite position, providing ... |
| Features |
According to VDE 0884 D Rated impulse voltage (transient overvoltage) VIOTM = 8 kV peak
D Isolation test voltage (partial discharge test voltage) Vpd = 2.8 kV peak D Rated isolation voltage (RMS includes DC) VIOWM = 1000 VRMS (1450 V peak) D Rated recurring peak voltage (repetitive) VIORM = 1000 VRMS D Creeping current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Thickness through insulation > 3 mm D Isolation materials according to UL 94 D Pollution degree 2 (DIN/VDE 0110) D Climatic classification 55/085/21 (IEC 68 part 1) D Further approvals: BS 415, BS 7... |
| Document |
 CNY21 Data Sheet
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| Distributor | Stock | Price | Buy |
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