The CNY21N consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 4-lead plastic dual inline package. The single components are mounted on one leadframe in the opposite position, providing a fixed distance between input and output for highest safety requirements of > 3 mm. Application Circuits for safe protective s.
According to VDE 0884 D Rated impulse voltage (transient overvoltage) VIOTM = 8 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 2.8 kV peak D Rated isolation voltage (RMS includes DC) VIOWM = 1000 VRMS (1450 V peak) D Rated recurring peak voltage (repetitive) VIORM = 1000 VRMS D Creeping current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Thickness through insulation > 3 mm D Isolation materials according to UL 94 D Pollution degree 2 (DIN/VDE 0110) D Climatic classification 55/085/21 (IEC 68 part 1) D Further approvals: BS 415, BS.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CNY21 |
TEMIC Semiconductors |
Optocoupler | |
2 | CNY21Exi |
TEMIC |
Optocoupler | |
3 | CNY28 |
QT Optoelectronics |
SLOTTED OPTICAL SWITCH | |
4 | CNY29 |
QT Optoelectronics |
SLOTTED OPTICAL SWITCH | |
5 | CNY17 |
Vishay Telefunken |
Optocoupler | |
6 | CNY17 |
Siemens Semiconductor Group |
TRIOS PHOTOTRANSISTOR OPTOCOUPLER | |
7 | CNY17 |
ON Semiconductor |
Phototransistor Optocouplers | |
8 | CNY17-1 |
Fairchild Semiconductor |
PHOTOTRANSISTOR OPTOCOUPLERS | |
9 | CNY17-1 |
CT Micro |
Phototransistor Optocoupler | |
10 | CNY17-1 |
Vishay |
Optocoupler | |
11 | CNY17-1 |
LITE-ON |
Photocoupler | |
12 | CNY17-1 |
Everlight |
6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |