2N6766 |
Part Number | 2N6766 |
Manufacturer | Inchange Semiconductor |
Description | ·VGS Rated at ±20V ·Silicon Gate for fast switching speeds ·IDSS 、RDS(ON) ,specified at elevated temperature ·Low drive reqirements APPLICATIONS designed for high power ,high speed application ,such a... |
Features |
2N6766
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 19A IGSS Gate Source Leakage Current VGS= 20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 200V; VGS= 0 VSD Diode Forward Voltage IF= 30A; VGS= 0 MIN MAX UNIT 200 V 24V 0.085 Ω 100 nA 1 mA 1.8 V isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn ... |
Document |
2N6766 Data Sheet
PDF 41.42KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N6760 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
2 | 2N6760 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | 2N6761 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
4 | 2N6761 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
5 | 2N6762 |
Fairchild Semiconductor |
N-Channel Power MOSFET |