2N6757 |
Part Number | 2N6757 |
Manufacturer | Inchange Semiconductor |
Description | ·VGS Rated at ±20V ·Silicon Gate for fast switching speeds ·IDSS 、RDS(ON) ,specified at elevated temperature ·Low drive reqirements APPLICATIONS designed for high power ,high speed application ,such a... |
Features |
6757
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 5A IGSS Gate Source Leakage Current VGS= 20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 150V; VGS= 0 VSD Diode Forward Voltage IF= 8A; VGS= 0 MIN MAX UNIT 150 V 24V 0.6 Ω 100 nA 1 mA 0.75 1.5 V isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn ... |
Document |
2N6757 Data Sheet
PDF 41.36KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N6751 |
Seme LAB |
Bipolar NPN Device | |
2 | 2N6751 |
SavantIC |
(2N6751 / 2N6752) Silicon Power Transistor | |
3 | 2N6752 |
SavantIC |
(2N6751 / 2N6752) Silicon Power Transistor | |
4 | 2N6753 |
Seme LAB |
Bipolar NPN Device | |
5 | 2N6753 |
SavantIC |
(2N6753 / 2N6754) Silicon Power Transistor |