·With TO-3 package ·High breakdown voltage ·Low saturation voltage ·Fast switching speed APPLICATIONS ·Off-line power supplies ·High-voltage inverters ·Switching regulators PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6751 2N6752 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER 2N6751 Collector-base.
2N6752 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6751 IC=0.2A ;IB=0 2N6752 VCEsat-1 VCEsat-2 VBEsat Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2N6751 ICEV Collector cut-off current 2N6752 IEBO hFE COB fT Emitter cut-off current DC current gain Output capacitance Transition frequency IC=5A; IB=1A IC=10A; IB=3A IC=5A ;IB=1A VCE=800V; VBE=-1.5V TC=100 VCE=850V; VBE=-1.5V TC=100 VEB=8V; IC=0 IC=5A ; VCE=3V IE=0 ; VCB=10V;f=0.1MHz IC=0.2A ; VCE=10V 8 50 15 450 1.0 3.0 1.3 0.1 1.0 0.1 1.0 2.0 40 250 60 pF MHz mA V V V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N6751 |
Seme LAB |
Bipolar NPN Device | |
2 | 2N6751 |
SavantIC |
(2N6751 / 2N6752) Silicon Power Transistor | |
3 | 2N6753 |
Seme LAB |
Bipolar NPN Device | |
4 | 2N6753 |
SavantIC |
(2N6753 / 2N6754) Silicon Power Transistor | |
5 | 2N6754 |
Seme LAB |
Bipolar NPN Device | |
6 | 2N6754 |
SavantIC |
(2N6753 / 2N6754) Silicon Power Transistor | |
7 | 2N6755 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
8 | 2N6755 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
9 | 2N6756 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
10 | 2N6756 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
11 | 2N6757 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
12 | 2N6757 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |