KTD1411 |
Part Number | KTD1411 |
Manufacturer | KEC |
Description | SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE DARLINGTON TRANSISTOR. FEATURES High DC Current Gain : hFE=3000(Min.) (VCE=2V, IC=1A) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collec... |
Features |
High DC Current Gain : hFE=3000(Min.) (VCE=2V, IC=1A)
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg
RATING 80 60 10 4 0.5 15 150
-55 150
UNIT V V V A A W
KTD1411
EPITAXIAL PLANAR NPN TRANSISTOR
A B C
H J K
D E
F G
L
M
N
O P
12 3
1. EMITTER 2. COLLECTOR 3. BASE
DIM A B C
D E F G H J K L M N O P
MILLIMETERS 8.3 MAX
5.8 0.7 Φ3.2+_ 0.1
3.5 11.0 +_ 0.3 2.9 MAX
1.0 MAX 1.9... |
Document |
KTD1411 Data Sheet
PDF 382.35KB |
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