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KP8N65D |
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| Part Number | KP8N65D |
| Manufacturer | KEC |
| Description | This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power ... |
| Features |
VDSS=650V, ID=8A Drain-Source ON Resistance : RDS(ON)(Max)=0.62 @VGS=10V Qg(typ.)= 21nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage Gate-Source Voltage
VDSS VGSS
650 30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Drain Power Dissipation
Tc=25 Derate above 25
ID IDP EAS EAR dv/dt
PD
8 5 18* 50
2.3
4.5 78 0.62
Maximum Junction Temperature Storage Temperature Range Thermal Characteristics
Tj Tstg
150 -55 150
Thermal Resistance, Junction-to... |
| Document |
 KP8N65D Data Sheet
PDF 385.17KB |
| Distributor | Stock | Price | Buy |
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