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IS67WVE4M16ALL |
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| Part Number | IS67WVE4M16ALL |
| Manufacturer | ISSI |
| Description | PSRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications. The 64Mb DRAM core device is organized as 4 Meg x 16 bits. These devices include ... |
| Features |
Asynchronous and page mode interface Dual voltage rails for optional performance VDD 1.8V, VDDQ 1.8V Page mode read access Interpage Read access : 70ns Intrapage Read access : 20ns Low Power Consumption Asynchronous Operation < 30 mA Intrapage Read < 18mA Standby < 180 uA (max.) Deep power-down (DPD) < 3uA (Typ) Low Power Feature Temperature Controlled Refresh Partial Array Refresh Deep power-down (DPD) mode Operating temperature Range Industrial and Automotive, A1: -40°C~85°C Package: 48-ball TFBGA, 48-pin TSOP-I Notes : 1. The 48-pin TSOP-I package option ... |
| Document |
 IS67WVE4M16ALL Data Sheet
PDF 463.37KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IS67WVE4M16EALL |
ISSI |
64Mb Async/Page PSRAM |
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| 2 | IS67WVE4M16EBLL |
ISSI |
64Mb Async/Page PSRAM |
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| 3 | IS67WVE4M16ECLL |
ISSI |
64Mb Async/Page PSRAM |
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| 4 | IS67WVE4M16TALL |
ISSI |
64Mb Async/Page PSRAM |
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| 5 | IS67WVE4M16TBLL |
ISSI |
64Mb Async/Page PSRAM |
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