IRFP260 डाटा शीट PDF( Datasheet )

www.DataSheet4U.com Standard Power MOSFET N-Channel Enhancement Mode IRFP 260 VDSS ID (cont) RDS(on) = 200 V = 46 A = 55 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg Md Weight Test

Power MOSFET IRFP260, SiHFP260 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 230 42 110 Single 0.055 TO-247AC D S D G G S N-Channel

iscN-Channel MOSFET Transistor IRFP260 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤55mΩ @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum L

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP260M，IIRFP260M ·FEATURES ·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot va

PD - 96293 IRFP260MPbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive

PD - 95010A IRFP260NPbF l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Fr