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IRFP260 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Standard Power MOSFET - N-Channel Enhancement Mode - IXYS Corporation

भाग संख्या IRFP260
समारोह Standard Power MOSFET - N-Channel Enhancement Mode
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IRFP260?> डेटा पत्रक पीडीएफ

IRFP260 pdf
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IRFP 260
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
VDS = 10 V; ID = 28 A, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
24 34
3900
760
320
S
pF
pF
pF
VGS = 10 V, VDS = 100 VDSS, ID = 46A
RG = 4.3 (External)
23 ns
30 ns
90 ns
28 ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
230
42
110
nC
nC
nC
0.45 K/W
0.24 K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
IS VGS = 0 V
ISM Repetitive; pulse width limited by TJM
V I = I , V = 0 V,
SD F S GS
Pulse test, t 300 µs, duty cycle d 2 %
46 A
180 A
1.8 V
trr IF = 0.5 IS, -di/dt = 100 A/µs, VR = 100 V
Qrr
260 590 ns
2.34 7.2 uC
TO-247 AD (IXTH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2

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