IRF220 डाटा शीट PDF( Datasheet )

Semiconductor IRF220, IRF221, IRF222, IRF223 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors

Semiconductor October 1997 IRF220, IRF221, IRF222, IRF223 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs Features • 4.0A and 5.0A, 150V and 200V • rDS(ON) = 0.8Ω and 1.2Ω • S

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF220 DESCRIPTION ·Drain Current ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistanc

PD - 94434 AUTOMOTIVE MOSFET IRF2204 Typical Applications ● ● HEXFET® Power MOSFET D Electric Power Steering 14 Volts Automotive Electrical Systems Advanced Process Technology Ultra Low On-Resistance D

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF2204，IIRF2204 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.6mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested