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IRF220 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Power MOSFETs - Harris

भाग संख्या IRF220
समारोह N-Channel Power MOSFETs
मैन्युफैक्चरर्स Harris 
लोगो Harris लोगो 
पूर्व दर्शन
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<?=IRF220?> डेटा पत्रक पीडीएफ

IRF220 pdf
IRF220, IRF221, IRF222, IRF223
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF220
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR
Continuous Drain Current. . .
TC = 100oC . . . . . . . . . . . .
........
........
...
...
...
...
.........
.........
ID
ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200
200
5.0
3.0
20
±20
40
0.32
Single Pulse Avalanche Rating. . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . Tpkg
85
-55 to 150
300
260
IRF221
150
150
5.0
3.0
20
±20
40
0.32
85
-55 to 150
300
260
IRF222
200
200
4.0
2.5
16
±20
40
0.32
85
-55 to 150
300
260
IRF223
150
150
4.0
2.5
16
±20
40
0.32
85
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
IRF220, IRF222
BVDSS ID = 250µA, VGS = 0V, (Figure 10)
200 - - V
IRF221, IRF223
150 - - V
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
IRF220, IRF221
VGS(TH) VDS = VGS, ID = 250µA
2.0 - 4.0 V
IDSS
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC
-
-
- 25 µA
- 250 µA
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
5.0 - - A
IRF222, IRF223
4.0 - - A
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
IRF220, IRF221
IGSS VGS = ±20V
rDS(ON) ID = 2.5A, VGS = 10V, (Figure 8)
- - ±100 nA
- 0.5 0.8
IRF222, IRF223
- 0.8 1.2
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
gfs VDS > ID(ON) x rDS(ON)MAX, ID = 2.5A
td(ON)
tr
td(OFF)
tf
VDD = 0.5 x Rated BVDSS, ID 2.5A, RG = 50
For IRF220, 222 RL = 80
For IRF221, 223 RL = 60
(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating
Temperature
Qg(TOT)
Qgs
VGS = 10V, ID = 6.0A, VDS = 0.8 x Rated BVDSS
Ig(REF) = 1.5mA, (Figures 14, 19, 20) Gate
Charge is Essentially Independent of Operating
Temperature
Qgd
1.3
-
-
-
-
-
-
-
2.5 -
20 40
30 60
50 100
30 60
11 15
5.0 -
6.0 -
S
ns
ns
ns
ns
nC
nC
nC
2

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डाउनलोड[ IRF220 Datasheet.PDF ]


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