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2SC3307 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon NPN Triple Diffused Type TRANSISTOR - Toshiba Semiconductor

भाग संख्या 2SC3307
समारोह Silicon NPN Triple Diffused Type TRANSISTOR
मैन्युफैक्चरर्स Toshiba Semiconductor 
लोगो Toshiba Semiconductor लोगो 
पूर्व दर्शन
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<?=2SC3307?> डेटा पत्रक पीडीएफ

2SC3307 pdf
Electrical Characteristics (Ta = 25°C)
2SC3307
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Rise time
Switching time Storage time
Fall time
Symbol
Test Condition
Min
ICBO
IEBO
V (BR) CBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
VCB = 800 V, IE = 0
VEB = 7 V, IC = 0
IC = 1 mA, IE = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 10 mA
VCE = 5 V, IC = 5 A
IC = 5 A, IB = 1 A
IC = 5 A, IB = 1 A
900
800
10
10
tr
20 μs
Input
IC =
IB1
5
A
Output
Typ.
Max
100
1
1
1.5
1
Unit
μA
mA
V
V
V
V
tstg IB2 ― ― 3 μs
VCC 400 V
tf IB1 = 0.5A , I B2 = 1.5 A,
duty cycle 1%
――
1
Marking
TOSHIBA
2SC3307
JAPAN
Part No. (or abbreviation code)
Lot No.
Note2
Note2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2
http://store.iiic.cc/
2009-07-17

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डाउनलोड[ 2SC3307 Datasheet.PDF ]


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