डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC3307 | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable |
INCHANGE |
|
2SC3307 | Silicon NPN Transistor TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC3307
2SC3307
High-Speed and High-Voltage Switching Applications Switching Regulator Applications High-Speed DC-DC Converter Applications
Industrial Appl |
Toshiba Semiconductor |
|
2SC3307 | SILICON POWER TRANSISTOR SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
2SC3307
DESCRIPTION ·With TO-3PL package ·Excellent switching times : tr=1.0µs(Max .),tf=1.0µs(Max .)(IC=5A |
SavantIC |
www.DataSheet.in | 2017 | संपर्क |