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FDMC6675BZ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FDMC6675BZ
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDMC6675BZ?> डेटा पत्रक पीडीएफ

FDMC6675BZ pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250 µA, VGS = 0 V
-30
V
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient
ID = -250 µA, referenced to 25 °C
20 mV/°C
IDSS Zero Gate Voltage Drain Current
VDS = -24 V,
VGS = 0 V
TJ = 125 °C
-1
-100
µA
IGSS
Gate to Source Leakage Current
VGS = ±25 V, VDS = 0 V
±10 µA
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = -250 µA
ID = -250 µA, referenced to 25 °C
VGS = -10 V, ID = -9.5 A
VGS = -4.5 V, ID = -6.9 A
VGS = -10 V, ID = -9.5 A, TJ = 125 °C
VDD = -5 V, ID = -9.5 A
-1.0
-1.9
-6
10.7
17.4
15.2
28
-3.0
14.4
27.0
20.5
V
mV/°C
m
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = -15 V, VGS = 0 V,
f = 1 MHz
2154
392
349
2865
525
525
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = -15 V, ID = -9.5 A,
VGS = -10 V, RGEN = 6
VGS = 0 V to -10 V
VGS = 0 V to -5 V VDD = -15 V,
ID = -9.5 A
11 20 ns
10 20 ns
44 71 ns
26 42 ns
46 65 nC
26 37 nC
6.4 nC
13 nC
www.DataShDereat4iUn.-cSomource Diode Characteristics
VSD
Source to Drain Diode Forward Voltage VGS = 0 V, IS = -9.5 A
VGS = 0 V, IS = -1.6 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = -9.5 A, di/dt = 100 A/µs
0.89 1.3
0.73 1.2
24 38
15 27
V
V
ns
nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 53 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0 %.
3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.
©2009 Fairchild Semiconductor Corporation
FDMC6675BZ Rev.D1
2
www.fairchildsemi.com

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