डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDMC6675BZ | N-Channel MOSFET FDMC6675BZ P-Channel PowerTrench® MOSFET
FDMC6675BZ
P-Channel Power Trench® MOSFET
-30 V, -20 A, 14.4 mΩ
Features
Max rDS(on) = 14.4 mΩ at VGS = -10 V, ID = -9.5 A Max rDS(on) = 27.0 mΩ at VGS = |
Fairchild Semiconductor |
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FDMC6675BZ | P-Channel MOSFET MOSFET – P-Channel, POWERTRENCH)
-30 V, -20 A, 14.4 mW
FDMC6675BZ
Description The FDMC6675BZ has been designed to minimize losses in load
switch applications. Advancements in both silicon and package technolo |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |