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2SC3356 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN SILICON TRANSISTOR - UTC

भाग संख्या 2SC3356
समारोह NPN SILICON TRANSISTOR
मैन्युफैक्चरर्स UTC 
लोगो UTC लोगो 
पूर्व दर्शन
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<?=2SC3356?> डेटा पत्रक पीडीएफ

2SC3356 pdf
2SC3356
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
BVCBO
20
V
Collector to Emitter Voltage
Emitter to Base Voltage
BVCEO
BVEBO
12
3
V
V
Collector Current
Power Dissipation
IC 100 mA
PD 200 mW
Junction Temperature
TJ 150 °С
Storage Temperature
TSTG
-65~ +150
°С
Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER
Collector-Base Cut-Off Current
Emitter-Base Cut-Off Current
DC Current Gain
Gain Bandwidth Product
Feed-Back Capacitance
Noise Figure
SYMBOL
ICBO
IEBO
hFE
fT
CRE
NF
TEST CONDITIONS
VCB =10V,IE =0
VEB =1 V, IC=0
VCE =10 V, IC =20 mA
VCE =10 V, IC =20 mA
VCB =10 V, IE =0, f =1.0MHz
VCE =10 V, IC =7mA, f =1.0GHz
„ CLASSIFICATION OF hFE
RANK
RANGE
A
50-160
B
160-240
MIN TYP MAX UNIT
1.0 μA
1.0 μA
50 300
7 GHz
1.0 pF
2.0 dB
C
240-300
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-024,E

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