2SC3356 डाटा शीट PDF( Datasheet )

DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier

UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER 3 3  DESCRIPTION The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line swi

SMD Type NPN Silicon Epitaxial Transistor 2SC3356 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power

isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3356 DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain MAG = 13 dB TYP. @VCE

Elektronische Bauelemente 2SC3356 NPN Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES  Low Noise Amplifier at VHF, UHF and CATV

PreliminaryData Sheet 2SC3356 R09DS0021EJ0300 NPN Silicon RF Transistor Rev.3.00 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold Jun 28, 2011 FEATURES • Low noi

www.DataSheet4U.com 2SC3356F NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES Low noise ampli