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BAR81 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon RF Switching Diodes - Infineon Technologies AG

भाग संख्या BAR81
समारोह Silicon RF Switching Diodes
मैन्युफैक्चरर्स Infineon Technologies AG 
लोगो Infineon Technologies AG लोगो 
पूर्व दर्शन
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<?=BAR81?> डेटा पत्रक पीडीएफ

BAR81 pdf
BAR81
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Reverse current
VR = 20 V
IR - - 20 nA
Forward voltage
IF = 100 mA
VF - 0.93 1 V
AC characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 3 V, f = 1 MHz
Forward resistance
IF = 5 mA, f = 100 MHz
Series inductance chip to ground
CT pF
- 0.6 -
- 0.57 -
rf - 0.7 - 
Ls - 0.15 - nH
Configuration of the shunt-diode
- A perfect ground is essential for optimum isolation
- The anode pins should be used as passage for RF
2 Aug-21-2001

विन्यास 2 पेज
डाउनलोड[ BAR81 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

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BAR80Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss)Siemens Semiconductor Group
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BAR80Silicon RF Switching DiodeInfineon Technologies AG
Infineon Technologies AG


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