डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BAR81 | Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) BAR 81 Silicon RF Switching Diode
Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss
Type BAR 81
Marking Ordering Code BBs Q62702Q62702-A11 |
Siemens Semiconductor Group |
|
BAR81 | Silicon RF Switching Diodes BAR81
Silicon RF Switching Diodes
Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss
3 4 2 1
VSO05553
Type BAR81
Maximum Ratings Parameter Diode reverse voltage F |
Infineon Technologies AG |
|
BAR81W | Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) BAR 81W
Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss
3 4
2 1
VPS05605
Type BAR 81W
Marking Ordering Code |
Siemens Semiconductor Group |
|
BAR81W | Silicon RF Switching Diode BAR81...
Silicon RF Switching Diode
Designed for use in shunt configuration in
high performance RF switches
High shunt signal isolation Low shunt insertion loss Optimized for short - open transformatio |
Infineon Technologies AG |
www.DataSheet.in | 2017 | संपर्क |