DataSheet.in

2N60 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL MOSFET - ART CHIP

भाग संख्या 2N60
समारोह N-CHANNEL MOSFET
मैन्युफैक्चरर्स ART CHIP 
लोगो ART CHIP लोगो 
पूर्व दर्शन
1 Page
		
<?=2N60?> डेटा पत्रक पीडीएफ

2N60 pdf
2N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 , unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
600
±30
Avalanche Current (Note 2)
IAR 2.0
Drain Current Continuous
TC = 25°C
TC = 100°C
ID
2.0
1.26
Drain Current Pulsed (Note 2)
IDP 8.0
Avalanche Energy
Repetitive(Note 2)
Single Pulse(Note 3)
EAR
EAS
4.5
140
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
Total Power Dissipation
TC = 25°C
PD
Derate above 25°C
45
0.36
Junction Temperature
TJ +150
Storage Temperature
TSTG
-55 ~ +150
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 , Starting TJ = 25°C
4. ISD2.4A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
UNIT
V
V
A
A
A
A
mJ
mJ
V/ns
W
W/°C
°C
°C
THERMAL DATA
PARAMETER
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
PACKAGE
TO-251
TO-252
TO-220
TO-220F
TO-251
TO-252
TO-220
TO-220F
SYMBOL
θJA
θJc
RATINGS
112
112
54
54
12
12
4
4
UNIT
°C / W
ELECTRICAL CHARACTERISTICS (TJ =25 , unless Otherwise specified.)
PARAMETER
Off Characteristics
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body
Leakage Forward
Current
Reverse
Breakdown Voltage Temperature
Coefficient
BVDSS
IDSS
IGSS
BVDSS/ TJ
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
ID = 250 µA
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
VGS(TH)
RDS(ON)
gFS
CISS
VDS = VGS, ID = 250µA
VGS = 10V, ID =1A
VDS = 50V, ID = 1A (Note 1)
VDS =25V, VGS =0V, f =1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
MIN
600
2.0
TYP MAX UNIT
V
10 µA
100 µA
100 nA
-100 nA
0.4 V/
4.0
3.8 5
2.25
270 350
40 50
57
V
S
pF
pF
pF
www.artschip.com
2

विन्यास 7 पेज
डाउनलोड[ 2N60 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
2N602A 600V N-channel Enhancement Mode Power MOSFETROUM
ROUM
2N60N-Channel MOSFETHAOHAI
HAOHAI


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English