2N60 डाटा शीट PDF( Datasheet )

2N60/F2N60/I2N60/E2N60/B2N60/D2N60 2A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conductio

2A, 600V, N沟道 场效应晶体管 产品参数规格书 工业型号 FQU2N60C FQD2N60C 公司型号 H2N60U H2N60D 通俗命名 2N60 H HAOHAI 封装标识 U: TO-251 D: TO-252 包装方式 条管装 卷�

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.0Ω(Max) ·100% avalanche tested ·Minimu

isc N-Channel MOSFET Transistor 2N60 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.0Ω(Max) ·100% avalanche tested ·

UNISONIC TECHNOLOGIES CO., LTD 2N60 2.0A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low

SEMICONDUCTOR 2N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (2A, 600Volts) DESCRIPTION The Nell 2N60 is a three-terminal silicon device with current conduction capability of 2A, fast sw

Shenzhen yecheng technology industry co.,ltd 2N60 N-Channel Power MOSFET General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without