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2SC3357 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN SILICON EPITAXIAL TRANSISTOR - GME

भाग संख्या 2SC3357
समारोह NPN SILICON EPITAXIAL TRANSISTOR
मैन्युफैक्चरर्स GME 
लोगो GME लोगो 
पूर्व दर्शन
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<?=2SC3357?> डेटा पत्रक पीडीएफ

2SC3357 pdf
Production specification
NPN SILICON EPITAXIAL TRANSISTOR
POWER MINI MOLD
2SC3357
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol
Test conditions
MIN TYP MAX UNIT
Collector-to-Base
Breakdown Voltage
V(BR)CBO
IC=10uA
20
V
Collector-emitter
breakdown voltage
V(BR)CEO
IC=1mA
12
V
Emitter-base breakdown
voltage
V(BR)EBO
IE=10uA
3.0
V
Collector cut-off current ICBO
VCB=10V,IE=0
1 μA
Emitter cut-off current
DC current gain
IEBO
hFE 备注 2
VEB=1.0V,IC=0
VCE=10V,IC=20mA
1 μA
50 120 300
Transition frequency
fT
VCE=10V,IC=20mA
6.5 GHz
Feed-Back Capacitance Cre 备注 3
VCB = 10 V, IC =0 mA,
f = 1.0 MHz
0.65 1.0 pF
Insertion power gain
|S21e|2
VCE=10V, IC= 20mA ,
f=1GHz
9 dB
Noise Figure
NF
VCE=10V,IC=7mA,
f=1GHz
1.1 dB
Noise Figure
NF
VCE=10V,IC=40mA,
f=1GHz
1.8 3.0 dB
备注 2Pulse Measurement PW 350 μs, Duty Cycle 2 %
备注 3The emitter terminal and the case shall be connected to the guard terminal of the
three-terminal capacitnace bridge.
CLASSIFICATION OF hFE
Rank
Range
MARKING
RH
50-100
RH
RF
80-160
RF
RE
125-250
RE
E120
Rev.A
www.gmicroelec.com
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डाउनलोड[ 2SC3357 Datasheet.PDF ]


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