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2SC3357 | NPN Silicon Transistor DATA SHEET
SILICON TRANSISTOR
2SC3357
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
DESCRIPTION
The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV ban |
NEC |
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2SC3357 | NPN EPITAXIAL SILICON RF TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
2SC3357
NPN SILICON TRANSISTOR
NPN EPITAXIAL SILICON RF TRANSISTOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION POWER MINI MOLD
DESCRIPTION
The UTC 2SC3357 is an NPN silicon epi |
UTC |
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2SC3357 | NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR
NE85634 / 2SC3357
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
3-PIN POWER MINIMOLD
FEATURES • Low noise and high gain
NF = 1.1 dB TYP., Ga = 7.5 d |
CEL |
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2SC3357 | NPN Silicon Transistor Production specification
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
2SC3357
FEATURES
Pb
z Low Noise and High Gain
Lead-free
NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V,
IC = 7 mA, f = 1.0 GHz
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GME |
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2SC3357 | Silicon NPN transistor 2SC3357
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package.
特征 / Features
低噪声,高增益,小封装功 |
BLUE ROCKET ELECTRONICS |
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2SC3357 | NPN Silicon RF Transistor SMD Type
NPN Silicon RF Transistor 2SC3357
IC Transistors
Features
Low Noise and High Gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V |
Kexin |
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2SC3357 | Silicon NPN RF Transistor isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC3357
DESCRIPTION ·Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VC |
Inchange Semiconductor |
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