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Power Innovations Limited |
NPN SILICON POWER TRANSISTORS 5 -65 to +150 -65 to +150 UNIT V V V V A A W °C °C PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing doe |
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SEMTECH |
PNP Silicon Transistor ector Emitter Saturation Voltage at -IC=100mA,-IB=10mA Base Emitter Voltage at –VCE=1V,-IC=100mA Transition Frequency at -VCE=6V, -IC=20mA Collector Output Capacitance at -VCB=6V, f=1MHz hFE hFE hFE hFE -ICBO -IEBO -VCEsat -VBE fT COB 70 120 2 |
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SavantIC |
Silicon NPN Power Transistors ion voltage IC=5A; IB=0.5A VBE Base-emitter voltage IC=5A ; VCE=5V ICBO Collector cut-off current VCB=120V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=1A ; VCE=5V fT Transition frequency IC=1A ; VCE=5V Cob Output |
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Toshiba Semiconductor |
Silicon NPN Transistor hin the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤4.5mΩType4mΩ) l High Power and Current Handing Capability l Low Reverse transfer Capacitances(Typical:480pF) l 100% Single Pulse avalanche energy Test Applications： UPS,Inverter,Lighting. Absolute（Tc= 25℃ |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design th |
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Huajing |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤3.5mΩ) l Low Gate Charge (Typical Data:75nC) l Low Reverse transfer capacitances(Typical:800pF) l 100% Single Pulse avalanche energy Test Applications： UPS,Inverter,Lighting. Absolute（Tc= 25℃ unless otherw |
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NEC |
NPN SILICON POWER TRANSISTOR • Low saturation voltage VCE(sat) = 0.5 V MAX. (IC = −2 A, IB = 0.2 A) • Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A) • Less cramping space required due to small and thin package and reducing the trouble for attachment t |
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Toshiba |
Silicon NPN Transistor ition VCB = 230 V, IE = 0 VEB = 5 V, IC = 0 IC = 50 mA, IB = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 7 A IC = 8 A, IB = 0.8 A VCE = 5 V, IC = 7 A VCE = 5 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz Weight: 9.75 g (typ.) Min ― ― 230 55 35 ― ― ― ― Typ. ― |
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Fairchild Semiconductor |
NPN Silicon Transistor itance fT Current Gain Bandwidth Product tON Turn On Time tSTG Storage Time tF Fall Time * Pulse test: PW≤300µs, Duty cycle≤2% VEB = 9V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A IC = 2A, I |
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SEMTECH |
NPN Silicon Transistor at VCB = 50 V at VCB = 60 V Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, |
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Sanken |
Silicon PNP Transistor .9±0.3 8.4±0.2 ø3.3±0.2 a b 3.9 ±0.2 0.8±0.2 13.0min 1.35±0.15 1.35±0.15 2.54 0.85 +0.2 -0.1 2.54 0.45 +0.2 -0.1 2.4±0.2 2.2±0.2 Weight : Approx 2.0g BCE a. Part No. b. Lot No. Collector Current IC(A) DC Current Gain hFE I C – V CE |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2010C [2SC4106] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 Specifications 0.8 123 2. |
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Toshiba Semiconductor |
Silicon NPN Transistor nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please de |
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SEMTECH |
NPN Silicon Transistor ctor Emitter Breakdown Voltage at IC=2mA ST 2SC828 ST 2SC828A Emitter Base Breakdown Voltage at IE=10µA Collector Saturation Voltage at IC=50mA, IB=5mA Base Emitter Voltage at IC=10mA, VCE=5V Gain Bandwidth Product at IC=-2mA, VCE=10V Noise Figu |
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ETC |
PNP SILICON TRANSISTOR |
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SavantIC |
Silicon NPN Power Transistors CEO(SUS) Collector-emitter sustaining voltage TIP41A TIP41B IC=30mA; IB=0 TIP41C VCE(sat) Collector-emitter saturation voltage IC=6A; IB=0.6A VBE Base-emitter on voltage IC=6A ; VCE=4V TIP41 VCE=40V; VEB=0 ICES Collector cut-off current |
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Toshiba |
Silicon N-Channel IGBT (1) 6.5th generation (2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.05 µs (typ.) (IC = 50 A) FWD : trr = 0.35 µs (typ.) (IF = 15 A) (5) Low |
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Wing Shing Computer Components |
NPN Triple Diffused Planar Silicon Transistor Fax:(852)2797 8153 E-mail: [email protected] |
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Rafael Microelectronics |
High Performance Low Power Advanced Digital TV Silicon Tuner e schematic Vincent Huang 2011/11/16 1.2 Modify reference schematic Vincent Huang 2011/11/30 © 2011 by Rafael Microelectronics, Inc. All Rights Reserved. Information in this document is provided in connection with Rafael Microelectronics, Inc. |
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