nexperia BC5 fiche technique

No.	Partie #	Fabricant	Description
1	BC51PAS	nexperia	1A PNP medium power transistors and benefits  High collector current capability  Three current gain selections IC and ICM  Reduced Printed-Circuit Board (PCB)  Leadless very small SMD plastic area requirements package with medium power capability  Exposed heat sink for e
2	BC52PAS	nexperia	1A PNP medium power transistors and benefits  High collector current capability  Three current gain selections IC and ICM  Reduced Printed-Circuit Board (PCB)  Leadless very small SMD plastic area requirements package with medium power capability  Exposed heat sink for e
3	BC51PA	nexperia	1A PNP medium power transistors and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capabili
4	BC52PA	nexperia	1A PNP medium power transistors and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capabili
5	BC56PAS	nexperia	1A NPN medium power transistors and benefits  High collector current capability IC and ICM  Reduced Printed-Circuit Board (PCB)  Three current gain selections  Leadless very small SMD plastic area requirements package with medium power capability  Exposed heat sink for ex
6	BC54PAS	nexperia	1A NPN medium power transistors and benefits  High collector current capability IC and ICM  Reduced Printed-Circuit Board (PCB)  Three current gain selections  Leadless very small SMD plastic area requirements package with medium power capability  Exposed heat sink for ex
7	BC53PAS	nexperia	1A PNP medium power transistors and benefits  High collector current capability  Three current gain selections IC and ICM  Reduced Printed-Circuit Board (PCB)  Leadless very small SMD plastic area requirements package with medium power capability  Exposed heat sink for e
8	BC55PA	nexperia	1A NPN medium power transistors and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capabili
9	BC54PA	nexperia	1A NPN medium power transistors and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capabili
10	BC53PA	nexperia	1A PNP medium power transistors and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capabili
11	BC55PAS	nexperia	1A NPN medium power transistors and benefits  High collector current capability IC and ICM  Reduced Printed-Circuit Board (PCB)  Three current gain selections  Leadless very small SMD plastic area requirements package with medium power capability  Exposed heat sink for ex
12	BC56PA	nexperia	1A NPN medium power transistors and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capabili