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nexperia BAW DataSheet

No. Partie # Fabricant Description Fiche Technique
1
BAW56SRA

nexperia
Quad high-speed switching diodes
and benefits
• High switching speed: trr ≤ 4 ns
• Low leakage current
• Reverse voltage VR ≤ 90 V
• Low capacitance Cd ≤ 2 pF
• Ultra small SMD plastic package
• AEC-Q101 qualified 3. Applications
• High-speed switching
• General-purpose switching
Datasheet
2
BAW56QA

nexperia
Dual common anode high-speed switching diode
and benefits
• High switching speed: trr ≤ 4 ns
• Low leakage current
• Reverse voltage VR ≤ 90 V
• Low capacitance Cd ≤ 2 pF
• Ultra small SMD plastic package
• Low package height of 0.37 mm
• AEC-Q101 qualified
• Suitable for Automatic Optical Insp
Datasheet
3
BAW56

nexperia
High-speed switching diode
and benefits
• High switching speed: trr ≤ 4 ns
• Low capacitance: Cd ≤ 2 pF
• Low leakage current
• Reverse voltage: VR ≤ 90 V
• Small SMD plastic package 3. Applications
• High-speed switching
• General-purpose switching 4. Quick reference data
Datasheet
4
BAW156

nexperia
Low-leakage double diode
and benefits
• Plastic SMD package
• Low leakage current: typ. 3 pA
• Switching time: typ. 0.8 µs
• Continuous reverse voltage: max. 75 V
• Repetitive peak reverse voltage: max. 85 V
• Repetitive peak forward current: max. 500 mA.
• AEC-Q101 qualifie
Datasheet



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