No. | Partie # | Fabricant | Description | Fiche Technique |
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nexperia |
General-purpose Schottky diodes |
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nexperia |
High-voltage switching diodes I High switching speed: trr ≤ 50 ns I Low leakage current I High reverse voltage: VR ≤ 250 V I Low capacitance: Cd ≤ 2 pF I Very small SMD plastic package I AEC-Q101 qualified 1.3 Applications I High-speed switching I General-purpose switching I Vo |
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nexperia |
Low-leakage diode and benefits • Plastic SMD package • Low leakage current: typ. 3 pA • Switching time: typ. 0.8 us • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. • AEC-Q101 qualifie |
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nexperia |
General-purpose Schottky diodes |
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nexperia |
General-purpose Schottky diodes |
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nexperia |
High-speed switching diode and benefits High switching speed: trr ≤ 4 ns Reverse voltage: VR ≤ 75 V Repetitive peak reverse voltage: VRRM ≤ 100 V Repetitive peak forward current: IFRM ≤ 450 mA Small hermetically sealed glass SMD package 1.3 Applications High-speed |
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nexperia |
Low-leakage diode and benefits • Switching time typical: trr = 0.8 µs • Low leakage current typical: IR = 3 pA • Repetitive peak reverse voltage: VRRM ≤ 85 V • Low capacitance typical: Cd = 2 pF • Leadless ultra small SMD plastic package • Low package height of 0.48 m |
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nexperia |
High-speed switching diode and benefits High switching speed: trr 4 ns Low leakage current Repetitive peak reverse voltage: VRRM 100 V AEC-Q101 qualified Low capacitance Reverse voltage: VR 100 V Small SMD plastic packages 1.3 Applications High-speed sw |
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nexperia |
High-speed switching diode and benefits High switching speed: trr 4 ns Low leakage current Repetitive peak reverse voltage: VRRM 100 V AEC-Q101 qualified Low capacitance Reverse voltage: VR 100 V Small SMD plastic packages 1.3 Applications High-speed sw |
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nexperia |
High-speed switching diode and benefits High switching speed: trr 4 ns Low leakage current Repetitive peak reverse voltage: VRRM 100 V AEC-Q101 qualified Low capacitance Reverse voltage: VR 100 V Small SMD plastic packages 1.3 Applications High-speed sw |
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nexperia |
General-purpose dual Schottky diode and benefits • High switching speed • Low leakage current • High breakdown voltage • Low capacitance 3. Applications • Ultra high-speed switching • Voltage clamping 4. Quick reference data Table 1. Quick reference data Symbol Parameter IF forw |
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nexperia |
General-purpose Schottky diodes |
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nexperia |
General-purpose Schottky diodes |
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nexperia |
General-purpose Schottky diodes |
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nexperia |
General-purpose Schottky diodes |
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nexperia |
General-purpose Schottky diodes |
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nexperia |
General-purpose Schottky diodes and benefits High switching speed High breakdown voltage AEC-Q101 qualified 1.3 Applications Ultra high-speed switching 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Per diode IF forward current VF forward voltage VR |
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nexperia |
High-voltage switching diodes and benefits • High switching speed: trr ≤ 50 ns • Low capacitance: Cd ≤ 5 pF • Reverse voltage: VR ≤ 200 V • AEC-Q101 qualified • Repetitive peak reverse voltage: VRRM ≤ 250 V • Repetitive peak forward current: IFRM ≤ 1 A • Small SMD plastic package |
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nexperia |
High-voltage switching diode and benefits • High switching speed: trr ≤ 50 ns • Low leakage current: IR ≤ 100 nA • High reverse voltage VR ≤ 200 V • Low capacitance: Cd ≤ 2 pF • Ultra small and leadless SMD plastic package • Soldarable side pads • Package height typ. 0.37 mm • A |
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nexperia |
High-voltage switching diode and benefits • High switching speed: trr ≤ 50 ns • Low leakage current • Reverse voltage VR ≤ 100 V • Low capacitance: Cd ≤ 5 pF • Small SMD plastic package • AEC-Q101 qualified 3. Applications • High-speed switching at high voltage • High-voltage g |
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