| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
nELL |
Ultrafast Soft Recovery Diode Ultrafast and ultrasoft recovery Very low IRRM and Qrr Compliant to RoHS Designed and qualified for industrial level Planar FRED Chip BENEFITS Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced |
|
|
|
|
nELL |
Ultrafast Soft Recovery Diode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Q rr Specified at operating conditions Lead (Pb)-free Designed and qualified for industrial level Planar FRED Chip BENEFITS Reduced RFI and EMI Reduced power loss in diode and switching tra |
|
|
|
|
nELL |
Ultrafast Soft Recovery Diode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level Planar FRED Chip BENEFITS Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher f |
|
|
|
|
nELL |
Ultrafast Soft Recovery Diode Ultrafast recovery time Very low leakage current Very low Qrr Specified at operating conditions Designed and qualified for industrial level Planar FRED Chip 175°C operating junction temperature BENEFITS Reduced RFI and EMI Reduced power loss in diode |
|
|
|
|
nELL |
Ultrafast Soft Recovery Diode Ultrafast recovery Ultrasoft recovery Very low I RRM Very low Q rr Specified at operating conditions Lead (Pb)-free Designed and qualified for industrial level BENEFITS Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher f |
|
|
|
|
nELL |
Ultrafast Soft Recovery Diode Ultrafast recovery Ultrasoft recovery Very low I RRM Very low Q rr Specified at operating conditions Lead (Pb)-free Designed and qualified for industrial level Planar FRED Chip BENEFITS Reduced RFI and EMI Reduced power loss in diode and switching t |
|