| No. | Partie # | Fabricant | Description | Fiche Technique |
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nELL |
Complementary Silicon Power Transistors Designed for general-purpose switching and amplifier applications. DC current gain specified to 10A High current gain-Band width product: fT = 3 MHz (Min.) @ lC = 0.5 Adc Excellent safe operating area DESCRIPTION The BD911 is a silicon epitaxial-base |
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nELL |
Complementary Silicon Power Transistors Designed for general-purpose switching and amplifier applications. DC current gain specified to 10A High current gain-Band width product: fT = 3 MHz (Min.) @ lC = 0.5 Adc Excellent safe operating area DESCRIPTION The BD911 is a silicon epitaxial-base |
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