No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
|
|
nELL |
N-Channel Power MOSFET RDS(ON) = 1.2Ω @ VGS = 10V Ultra low gate charge(36nC max.) Low reverse transfer capacitance (CRSS = 12pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature PRODUCT SUMMARY ID (A |
|
|
|
nELL |
N-Channel Power MOSFET RDS(ON) = 1.2Ω @ VGS = 10V Ultra low gate charge(36nC max.) Low reverse transfer capacitance (CRSS = 12pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature PRODUCT SUMMARY ID (A |
|
|
|
nELL |
N-Channel Power MOSFET RDS(ON) = 1.2Ω @ VGS = 10V Ultra low gate charge(36nC max.) Low reverse transfer capacitance (CRSS = 12pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature PRODUCT SUMMARY ID (A |
|
|
|
nELL |
N-Channel Power MOSFET RDS(ON) = 1.2Ω @ VGS = 10V Ultra low gate charge(36nC max.) Low reverse transfer capacitance (CRSS = 12pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature PRODUCT SUMMARY ID (A |
|