No. | Partie # | Fabricant | Description | Fiche Technique |
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nELL |
N-Channel Power MOSFET RDS(ON) = 0.8Ω @ VGS = 10V Ultra low gate charge(54nC max.) Low reverse transfer capacitance (CRSS = 25pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature PRODUCT SUMMARY ID (A |
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nELL |
N-Channel Power MOSFET RDS(ON) = 5.0Ω@VGS = 10V Ultra low gate charge(11nC max.) Low reverse transfer capacitance (CRSS = 5pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-251 (I-PAK) (2N6 |
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nELL |
N-Channel PowerMOSFET RDS(ON) = 0.85Ω @ VGS = 10V Ultra low gate charge(54nC max.) Low reverse transfer capacitance (CRSS = 25pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D G DS TO-220AB (12N |
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nELL |
N-Channel Power MOSFET RDS(ON) = 5.0Ω@VGS = 10V Ultra low gate charge(11nC max.) Low reverse transfer capacitance (CRSS = 5pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D G D S TO-251 (I-PAK) (2 |
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nELL |
N-Channel Power MOSFET RDS(ON) = 0.85Ω @ VGS = 10V Ultra low gate charge(54nC max.) Low reverse transfer capacitance (CRSS = 25pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D G DS TO-220AB (12N |
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nELL |
N-Channel Power MOSFET RDS(ON) = 0.8Ω @ VGS = 10V Ultra low gate charge(54nC max.) Low reverse transfer capacitance (CRSS = 25pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature PRODUCT SUMMARY ID (A |
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nELL |
N-Channel Power MOSFET RDS(ON) = 5.0Ω@VGS = 10V Ultra low gate charge(11nC max.) Low reverse transfer capacitance (CRSS = 5pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D G D S TO-251 (I-PAK) (2 |
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nELL |
N-Channel Power MOSFET RDS(ON) = 5.0Ω@VGS = 10V Ultra low gate charge(11nC max.) Low reverse transfer capacitance (CRSS = 5pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D G D S TO-251 (I-PAK) (2 |
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nELL |
N-Channel Power MOSFET RDS(ON) = 5.0Ω@VGS = 10V Ultra low gate charge(11nC max.) Low reverse transfer capacitance (CRSS = 5pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D G D S TO-251 (I-PAK) (2 |
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nELL |
N-Channel Power MOSFET RDS(ON) = 0.8Ω @ VGS = 10V Ultra low gate charge(54nC max.) Low reverse transfer capacitance (CRSS = 25pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature PRODUCT SUMMARY ID (A |
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|
nELL |
N-Channel Power MOSFET RDS(ON) = 0.8Ω @ VGS = 10V Ultra low gate charge(54nC max.) Low reverse transfer capacitance (CRSS = 25pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature PRODUCT SUMMARY ID (A |
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|
nELL |
N-Channel Power MOSFET RDS(ON) = 0.85Ω @ VGS = 10V Ultra low gate charge(54nC max.) Low reverse transfer capacitance (CRSS = 25pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D G DS TO-220AB (12N |
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nELL |
N-Channel Power MOSFET RDS(ON) = 0.85Ω @ VGS = 10V Ultra low gate charge(54nC max.) Low reverse transfer capacitance (CRSS = 25pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D G DS TO-220AB (12N |
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